DocumentCode
2596044
Title
Cost-Effective High Performance Monolithic X-Band Low Noise Amplifiers
Author
Wang, D.C. ; Pauley, R.G. ; Wang, S.K. ; Liu, L.C.T.
Volume
86
Issue
1
fYear
1986
fDate
31564
Firstpage
61
Lastpage
63
Abstract
A low cost and high performance X-band low-noise amplifier with ion-implanted MESFET technology has been demonstrated. Various design, material, and processing approaches have been evaluated in terms of yield, cost, and device performance. An average noise figure of 2.2 dB and standard deviation of 0.1 dB with an associated gain of 22.5 dB and standard deviation of 0.8 dB at center frequency band of 9.5 GHz has been measured.
Keywords
Circuit noise; Costs; FETs; Gain; Gallium arsenide; Low-noise amplifiers; MMICs; Measurement standards; Noise figure; Radar antennas;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits
Type
conf
DOI
10.1109/MCS.1986.1114480
Filename
1114480
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