DocumentCode
2596497
Title
Monolithic MBE GaAs Pin Diode Limiter
Author
Seymour, David J. ; Heston, David D. ; Lehmann, Randall E.
Volume
87
Issue
1
fYear
1987
fDate
31929
Firstpage
35
Lastpage
37
Abstract
A broadband MBE GaAs PIN/NIP diode limiter has demonstrated 15 dB of isolation with a +32.5 dBm input signal while maintaining less than 0.25 dB of small-signal insertion loss from 0.05 GHz to 14 GHz. These results were obtained by incorporating vertical GaAs PIN/NIP diodes in a shunt-loaded microstrip configuration.
Keywords
Bonding; Circuits; Diodes; FETs; Fabrication; Gallium arsenide; Gold; Insertion loss; Microstrip; Radar;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits
Type
conf
DOI
10.1109/MCS.1987.1114511
Filename
1114511
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