Title :
On-wafer measurements of S-MMIC amplifiers from 400–500 GHz
Author :
Samoska, L.A. ; Fung, Andy ; Pukala, D. ; Kangaslahti, Pekka ; Lai, Richard ; Sarkozy, Stephen ; Mei, X.B. ; Boll, G.
Author_Institution :
California Institute of Technology, Pasadena, United States
Abstract :
Summary form only given, as follows. In this paper, we describe the design, simulation, and on-wafer measurements of Submillimeter-wave Monolithic Integrated Circuit (S-MMIC) amplifiers having gain in the 400–500 GHz range. The amplifiers have been fabricated by Northrop Grumman´s (NGC) 35-nm InP high electron mobility transistor (HEMT) process. We measured approximately 10 dB of gain at 474 GHz for a three-stage amplifier, with over 9 dB of gain at 490 GHz.
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5973454
