Title :
Copper-oxide reduction for low-temperature wafer bonding
Author :
Rebhan, B. ; Tollabimazraehno, S. ; Plach, T. ; Hesser, G. ; Burggraf, J. ; Mittendorfer, G. ; Dragoi, V. ; Wimplinger, M. ; Hingerl, K.
Author_Institution :
EV Group, St. Florian am Inn, Austria
Abstract :
Silicon wafers with a 500 nm sputtered Cu layer were successfully bonded at low temperatures of 175°C for 30 min in forming gas. Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) were used for oxide detection and microstructure imaging.
Keywords :
Auger electron spectroscopy; copper; copper compounds; elemental semiconductors; silicon; transmission electron microscopy; wafer bonding; Auger electron spectroscopy; CuO; Si; copper-oxide reduction; forming gas; low-temperature wafer bonding; microstructure imaging; oxide detection; silicon wafer; size 500 nm; sputtered Cu layer; temperature 175 degC; time 30 min; transmission electron microscopy; Bonding; Materials; Metals; Microstructure; Transmission electron microscopy; Wafer bonding;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4673-0743-7
DOI :
10.1109/LTB-3D.2012.6238047
