• DocumentCode
    2596934
  • Title

    Analysis Of Sidewall Lateral Parasitic Leakage In A 16-mb Dram Cell

  • Author

    Geissler, Stephen F. ; Mandelman, Jack A.

  • Author_Institution
    IBM General Technology Division
  • fYear
    1990
  • fDate
    3-4 Jun 1990
  • Firstpage
    23
  • Lastpage
    24
  • Keywords
    FETs; Failure analysis; Finite element methods; Geometry; Lifting equipment; Numerical analysis; Predictive models; Random access memory; Very large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Modeling of Processes and Devices for Integrated Circuits, 1990. NUPAD III. 1990 Workshop on
  • Type

    conf

  • DOI
    10.1109/NUPAD.1990.748258
  • Filename
    748258