• DocumentCode
    2596967
  • Title

    Low temperature Cu/Cu direct bonding using formic gas in-situ treatment

  • Author

    Yang, Wenhua ; Akaike, Masatake ; Suga, Tadatomo

  • Author_Institution
    Sch. of Eng., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2012
  • fDate
    22-23 May 2012
  • Firstpage
    79
  • Lastpage
    79
  • Abstract
    A low temperature Cu/Cu direct bonding technology using formic acid vapor treatment was developed. Using this technology, 6mm×6mm Cu film chips were bonded at low temperature in N2 atmosphere. XPS surface analysis shows that Cu surface oxide was reduced after formic gas in-situ treatment. The bonding was conducted in N2 at 200°C after Cu surface was treated at 200°C for 10min.
  • Keywords
    X-ray photoelectron spectra; chemical mechanical polishing; copper; metallic thin films; organic compounds; surface treatment; wafer bonding; Cu-Cu; XPS surface analysis; copper film chip; copper surface oxide; formic acid vapor treatment; formic gas in-situ treatment; low temperature direct bonding technology; temperature 200 degC; time 10 min; Atmosphere; Bonding; Copper; Educational institutions; Films; Silicon; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4673-0743-7
  • Type

    conf

  • DOI
    10.1109/LTB-3D.2012.6238051
  • Filename
    6238051
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2596967