DocumentCode :
2597573
Title :
An Improved Model for Ion Implantation in Two-Dimensions and Application to the Analysis of LDD Device Performance
Author :
Crandle, T.L. ; Motzny, S.J. ; Ward, D.E. ; Grabowski, W.B. ; Pack, R.C.
Author_Institution :
Technology Modeling Associates
fYear :
1990
fDate :
3-4 Jun 1990
Firstpage :
93
Lastpage :
94
Keywords :
Electric breakdown; Etching; FETs; Implants; Ion implantation; Monte Carlo methods; Performance analysis; Predictive models; Scattering; Semiconductor process modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Modeling of Processes and Devices for Integrated Circuits, 1990. NUPAD III. 1990 Workshop on
Type :
conf
DOI :
10.1109/NUPAD.1990.748293
Filename :
748293
Link To Document :
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