A floating gate method for MOS transistor gate capacitance and Leff measurements and its implementation in a parametric test

Author

Kazerounian, R. ; Singh, Ashutosh ; Eltan, B.

Author_Institution

WaferScale Integration Inc., Fremont, CA, USA

fYear

1989

fDate

13-14 March 1989

Firstpage

23

Lastpage

27

Abstract

A method for the measurement of the effective channel length and gate capacitances of metal-oxide semiconductor (MOS) transistors is introduced. This method translates capacitance measurement into a simple threshold voltage measurement and is very accurate in the determination of effective channel lengths of short channel DDD and LDD devices. This technique is implemented in a parametric tester for routine process monitoring.

Keywords

capacitance measurement; insulated gate field effect transistors; length measurement; semiconductor device testing; DDD devices; LDD devices; MOS transistor; capacitance measurement; effective channel length; floating gate method; gate capacitances; parametric test; process monitoring; threshold voltage measurement; CMOS process; Capacitance measurement; Capacitors; Condition monitoring; Length measurement; MOSFETs; Testing; Threshold voltage; Voltage control; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1989. ICMTS 1989. Proceedings of the 1989 International Conference on

Print_ISBN

0-87942-714-0

Type

conf

DOI

10.1109/ICMTS.1989.39275

Filename

39275