Title :
Test masks for micromachining silicon
Author :
Puers, B. ; Sansen, Willy
Author_Institution :
Dept. of Electron., Catholic Univ. of Leuven, Heverlee, Belgium
Abstract :
Test masks were elaborated to gain control in the use of anisotropic etchants for micromachining silicon. The masks incorporate structures other than wafer flats with different orientations. The aim is to determine the behavior of the etchants in terms of crystal orientation. A second set of test masks resulting in a novel compensation technique for preventing convex corner undercutting is presented.
Keywords :
elemental semiconductors; etching; machining; masks; semiconductor technology; silicon; Si micromachining; anisotropic etchants; compensation technique; convex corner undercutting; crystal orientation; test masks; Chemicals; Conductivity; Etching; Fabrication; Gain control; Goniometers; Mechanical sensors; Micromachining; Silicon; Testing;
Conference_Titel :
Microelectronic Test Structures, 1989. ICMTS 1989. Proceedings of the 1989 International Conference on
Print_ISBN :
0-87942-714-0
DOI :
10.1109/ICMTS.1989.39280
