• DocumentCode
    2597946
  • Title

    Decade bandwidth 2 to 20 GHz GaN HEMT power amplifier MMICs in DFP and no FP technology

  • Author

    Komiak, J.J. ; Chu, K.-Y. ; Chao, P.C.

  • Author_Institution
    BAE Systems, Nashua, United States
  • fYear
    2011
  • fDate
    5-10 June 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given, as follows. Design and performance of power amplifiers that have established new benchmarks for 2 to 20 GHz power are reported. The Dual Field Plate amplifier achieved P3dB of 26.3 Watts max., 15.4 Watts average, with 38.3% max 19.8% average PAE. Using an improved device, the No FP amplifier achieved P3dB of 21.6 Watts max., 16.0 Watts average, with 35.7% max 25.9% average PAE. This output power, bandwidth, and efficiency is superior to the best previously reported results for GaN HEMT power amplifiers.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-61284-754-2
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2011.5973509
  • Filename
    5973509
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2597946