A scalable linear model for FETs

Summary form only given, as follows. A small-signal model of the intrinsic region of a microwave FET that considers four capacitance terms is examined. The addition of a fourth capacitance rather than a channel resistance or delay term enables extraction of dispersion-free parameters, better consistency with a large signal model and better scaling properties. An important aspect of the model topology is separation of resistive and reactive elements so that trans- and output conductance correspond to real parts of the Y-parameters.