• DocumentCode
    2598653
  • Title

    Low loss cryogenic InAs/AlSb HEMT non-reflective SP4T switch

  • Author

    Ma, B.Y. ; Bergman, J.I. ; Hacker, J.B. ; Sullivan, G.J. ; Sailer, A.L. ; Brar, B.

  • Author_Institution
    Teledyne Scientific and Imaging, Thousand Oaks, United States
  • fYear
    2011
  • fDate
    5-10 June 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given, as follows. A non-reflective single pole four throw (SP4T) MMIC switch using ABCS InAs/AlSb HEMT process technology, designed for cryogenic temperature has been fabricated and characterized. This switch is suitable for low RF power applications that require very low insertion loss and good isolation. At 2 GHz, the SP4T switch demonstrated 0.52dB insertion loss and 33dB isolation at room temperature. At 90K, the switch has seen 0.2dB and 2dB improvement in insertion loss and isolation.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-61284-754-2
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2011.5973547
  • Filename
    5973547
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2598653