Linearity enhancement of CMOS device using a modified third-order transconductance cancellation technique for microwave amplifier

Summary form only given, as follows. This paper presents linearity enhancement of a CMOS device for microwave amplifier applications. The proposed method is based on a modified third-order transconductance cancellation technique in a 0.13 µm CMOS process. The third-order intermodulation distortion of the proposed NMOS device is improved by 15 dB as compared to the conventional single device. With the linearization, the measured IMD3 is enhanced by 14 dB, and the adjacent channel power ratio of the amplifier is improved by 7 dB.