DocumentCode :
2598799
Title :
Characterization of parasitics from microwave scattering parameters of semiconductor laser diode
Author :
Zhang, Shangjin ; Bao, Xiaobin ; Lu, Rongguo ; Liu, Shuang ; Zhang, Xiaoxia ; Liu, Yong
Author_Institution :
State Key Lab. of Adv. Opt. Commun. Syst. & Networks, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear :
2012
fDate :
19-20 April 2012
Firstpage :
1
Lastpage :
4
Abstract :
We proposed A novel method for characterizing the parasitics of semiconductor laser diode through measuring its scattering parameters. Experiments are designed and performed using our method, and furthermore, how the parasitic element affects the parasitics of semiconductor laser diodes is investigated. Our method only needs reflection coefficient of semiconductor laser diode to be measured, which is simple due to the developed microwave measurement techniques.
Keywords :
microwave measurement; semiconductor diodes; semiconductor lasers; microwave measurement technique; microwave scattering parameter; parasitic element; reflection coefficient; semiconductor laser diode; Semiconductor laser diode; parasitics; scattering parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2012 International Workshop on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4673-1893-8
Type :
conf
DOI :
10.1109/MMWCST.2012.6238149
Filename :
6238149
Link To Document :
بازگشت