Scalable compact modeling for SiGe HBTs suitable for microwave radar applications

Author

Lehmann, S. ; Weiss, Michael ; Zimmermann, Y. ; Pawlak, A. ; Aufinger, K. ; Schroter, M.

Author_Institution

Electron Devices & Integrated Circuits, Tech. Univ. Dresden, Dresden, Germany

fYear

2011

fDate

17-19 Jan. 2011

Firstpage

113

Lastpage

116

Abstract

The suitability of the compact model HICUM for a state-of-the-art Silicon-Germanium (SiGe) heterojunction bipolar transistor (HBT) technology is evaluated with special emphasis on an efficient scalable modeling methodology. Multifinger HBTs particularly applicable to power applications are modeled. For modeling the critical self-heating effect a distributed thermal network is applied, yielding only a small impact on modeling results though. DC, AC, and large-signal distortion characteristics show good agreement between measurements and results from compact model simulation, demonstrating the capability of the modeling approach.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; radar applications; semiconductor device models; HBT; SiGe; distributed thermal network; heterojunction bipolar transistor; microwave radar applications; scalable compact modeling; Harmonic analysis; Integrated circuit modeling; Load modeling; Silicon germanium; Solid modeling; Thermal resistance; Transistors; HICUM; Harmonics; Heterojunction bipolar transistors; Load-Pull; semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4244-8060-9

Type

conf

DOI

10.1109/SIRF.2011.5719339

Filename

5719339