DocumentCode

2599673

Title

Structural Defects and Junction Characteristics in Silicon Transistors

Author

Jungbluth, E.D. ; Wang, P.

Author_Institution

General Telephone and Electronics Laboratories, Inc., Bayside, New York

fYear

1965

fDate

Nov. 1965

Firstpage

379

Lastpage

389

Keywords

Atomic layer deposition; Capacitive sensors; Epitaxial layers; Impurities; Lattices; Silicon; Substrates; X-ray detection; X-ray detectors; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Failure in Electronics, 1965. Fourth Annual Symposium on the

Conference_Location

Chicago, IL, USA

ISSN

0097-2088

Type

conf

DOI

10.1109/IRPS.1965.362334

Filename

4207691