Title :
The Effect of Phosphorus Diffusion in Thermal Oxides on the Elevated Temperature Stability of MOS Structures
Author :
Carlson, H.G. ; Brown, G.A. ; Fuller, C.R. ; Osborne, J.
Author_Institution :
Texas Instruments Incorporated, 13500 North Central Expressway, Dallas, Texas
Keywords :
Activation analysis; Atomic measurements; Capacitors; Chemicals; Instruments; Nitrogen; Pollution measurement; Silicon; Temperature; Thermal stability;
Conference_Titel :
Physics of Failure in Electronics, 1965. Fourth Annual Symposium on the
Conference_Location :
Chicago, IL, USA
DOI :
10.1109/IRPS.1965.362335
