Title :
An Etch-Stop Barrier Structure for GaN High-Electron-Mobility Transistors
Author :
Bin Lu ; Min Sun ; Palacios, T.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
We present an etch-stop barrier structure for GaN high-electron-mobility transistors. With this new etch-stop structure, gate recess can be precisely controlled while maintaining a low surface defect density. Normally off GaN metal-insulator-semiconductor FETs fabricated using the new technology demonstrated a record effective channel mobility of 1131 cm2·V-1·s-1 with a subthreshold slope of 62 mV/decade. Due to the low interface density of states, these devices have very low hysteresis and negligible frequency dispersion in the capacitance-voltage (C-V) measurements.
Keywords :
III-V semiconductors; MISFET; carrier mobility; etching; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; channel mobility; etch stop barrier structure; frequency dispersion; gate recess; high electron mobility transistors; interface density of states; metal-insulator-semiconductor FET; surface defect density; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MISFETs; Semiconductor device measurement; Etch-stop layer; GaN transistor; Gate recess; mobility; normally off;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2237374