Negative resistance in the output characteristics of SOI MOSFETs

Summary form only given. The output characteristics (I_DS vs. V_DS) of thin-film SOI MOSFETs show a decrease in drain current for increasing drain-source voltage at high power densities. In addition, the pinch-off point is shifted for small channel length, an effect inconsistent with theory due to the suppression of the body effect in these transistors. In an investigation of these phenomena it was found that both the negative resistance and the movement of the pinch-off point arise from a degradation of mobility caused by local heating due to power dissipation in the channel. This is a result of the poor thermal conductivity of the buried oxide; a worst case is that of a thin-film transistor on a thick buried insulator