Title :
A NAND-type Flash Memory Using Impact Ionization Generated Substrate Hot Electron Programming (≫20MB/sec) and Hot Hole Erasing
Author :
Wu, Jau-Yi ; Kuo, Ming-Chang ; Hsu, Tzu-Hsuan ; Chen, Kuan-Fu ; Chen, Yin-Jen ; Lai, Erh-Kun ; Lee, Ming-Hsiu ; Hsieh, Kuang-Yeu ; Liu, Rich ; Lu, Chih-Yuan
Author_Institution :
Emerging Central Lab., Hsinchu
Abstract :
A new method to program and erase NAND devices without using high voltage Fowler-Nordheim (FN) stressing is investigated. Impact Ionization generated substrate Hot Electron (IIHE) and Band to Band tunneling Hot Hole (BBHH) are proposed for SONOS-type NAND flash memory application. Both junctions are biased with the same voltage to perform double-side-charge-injection without lateral electrical field induced current. A novel divided bit line architecture is introduced to achieve this operation. Fast program and erase speed of < 100mus is achieved. Good 10 K cycling endurance and high temperature data retention are demonstrated. IIHE/BBHH for floating gate memory and body-tied FinFET-type SONOS are also demonstrated.
Keywords :
MOSFET; NAND circuits; flash memories; hot carriers; impact ionisation; silicon compounds; NAND-type flash memory; Si-SiO2-SiN-SiO2-Si; band-to-band tunneling hot hole; body-tied FinFET-type SONOS; data retention; divided bit line architecture; double-side-charge-injection; floating gate memory; high voltage Fowler-Nordheim stressing; hot hole erasing; impact ionization generated substrate hot electron; Charge carrier processes; Electron traps; Electronic mail; Flash memory; Hot carriers; Impact ionization; Nonvolatile memory; Temperature; Tunneling; Voltage;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418870
