Title :
Characterization and Monte Carlo Analysis of Secondary Electrons Induced Program Disturb in a Buried Diffusion Bit-line SONOS Flash Memory
Author :
Tang, Chun-Jung ; Li, C.W. ; Tahui Wang ; Gu, S.H. ; Chen, P.C. ; Chang, Y.W. ; Lu, T.C. ; Lu, W.P. ; Chen, K.C. ; Lu, Chih-Yuan
Author_Institution :
Nat. Chiao-Tung Univ., Hsin-Chu
Abstract :
A new program disturb in a buried diffusion bit-line SONOS array is observed as a bit-line width is reduced. A multi-step Monte Carlo simulation is performed to explore the disturb mechanism. We find that the Vt shift of a disturbed cell is attributed to impact ionization-generated secondary electrons in a neighboring cell when it is in programming. The effects of substrate bias, bit-line dimension and pocket implant on the program disturb are characterized and evaluated by a Monte Carlo simulation.
Keywords :
Monte Carlo methods; electron beam effects; flash memories; logic arrays; nitrogen compounds; silicon compounds; substrates; Vt shift; buried diffusion bit-line SONOS flash memory array; impact ionization-generated secondary electron; multi step Monte Carlo analysis; pocket implant; secondary electrons induced program disturbance; substrate bias; Charge carrier processes; Electronics industry; Electrons; Flash memory; Impact ionization; Industrial electronics; Medical simulation; Monte Carlo methods; SONOS devices; Voltage;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418894
