Title :
Electrical performance of vertical natural capacitor for RF system-on-chip in 32-nm technology
Author :
Liu, En-Xiao ; Li, Er-Ping
Author_Institution :
Electron. & Photonics Dept., A*STAR, Singapore, Singapore
Abstract :
Radio frequency system-on-chips (RF SoC) require high quality passive devices such as capacitors. We comprehensively studied the vertical natural capacitors (VNCAP) made of CMOS back-end-of-lines (BEOL) in 32-nm technology. We used electromagnetic simulation and a Pi-type equivalent circuit model for the study of the VNCAP, and reported its electrical characteristics including the scattering parameter, effective capacitance, self-resonant frequency and quality factor up to 20 GHz. We also briefly discussed the performance scaling trend of VNCAPs from 65-nm to 32-nm technology.
Keywords :
CMOS integrated circuits; Q-factor; capacitors; equivalent circuits; integrated circuit modelling; radiofrequency integrated circuits; system-on-chip; CMOS back-end-of-lines; RF SoC; RF system-on-chip; electrical performance; electromagnetic simulation; equivalent circuit model; high quality passive device; quality factor; radio frequency system-on-chip; size 32 nm; vertical natural capacitor; Capacitance; Capacitors; Fingers; Metals; Q factor; Radio frequency; System-on-a-chip; electromagnetic modeling; equivalent circuit model; radio frequency (RF) system-on-chip (SOC); vertical natural capacitor;
Conference_Titel :
Electrical Performance of Electronic Packaging and Systems (EPEPS), 2011 IEEE 20th Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-9398-2
Electronic_ISBN :
pending
DOI :
10.1109/EPEPS.2011.6100179
