DocumentCode :
2602652
Title :
Factors Involved in the Scanning Electron Microscope Analysis of Glass Passivated Devices
Author :
Gonzales, A.J.
Author_Institution :
Motorola, Inc., Semiconductor Products Division, Phoenix, Arizona 85008
fYear :
1971
fDate :
25993
Firstpage :
142
Lastpage :
148
Abstract :
Glass passivation of device surfaces can modify the information which can be obtained by the Scanning Electron Microscope. Integrated circuits containing a variety of defects have been studied before and after passivation to illustrate the deleterious effects of passivation on scanning microscopy analysis. In addition advantages of viewing the glass surface and techniques of glass removal and contrast enhancement are investigated.
Keywords :
Aluminum; Conductive films; Electron beams; Electron emission; Glass; Image resolution; Ohmic contacts; Optical microscopy; Passivation; Scanning electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1971. 9th Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1971.362507
Filename :
4207876
Link To Document :
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