DocumentCode :
2602917
Title :
A Procedure for the Evaluation and Failure Analysis of M.O.S. Memory Circuits using the Scanning Electron Microscope in Potential Contrast Mode
Author :
Behera, S.K. ; Speer, D.P.
Author_Institution :
Microsystems International Limited, P.O. Box 3529, Station C, Ottawa, Ontario, Canada
fYear :
1972
fDate :
26390
Firstpage :
5
Lastpage :
11
Abstract :
Methods of evaluation of M.O.S. memories with the S.E.M. in voltage contrast mode with emphasis on surface potential measurement techniques were discussed. An HF 1101 - 256 bit RAM was used as the test vehicle and techniques for threshold voltage measurements on any M.O.S. transistor in the circuit was established. Voltage contrast images of patterns written into the memory and a stroboscopic method of analysing the device under dynamic conditions were reported.
Keywords :
Circuit testing; Failure analysis; Hafnium; Measurement techniques; Random access memory; Read-write memory; Scanning electron microscopy; Threshold voltage; Vehicles; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1972. 10th Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1972.362521
Filename :
4207893
Link To Document :
بازگشت