Title :
A review of failure modes and mechanisms of GaN-based HEMTs
Author :
Zanoni, Enrico ; Meneghesso, Gaudenzio ; Verzellesi, Giovanni ; Danesin, Francesca ; Meneghini, Matteo ; Rampazzo, Fabiana ; Tazzoli, Augusto ; Zanon, Franco
Author_Institution :
Univ. di Padova, Padova
Abstract :
Failure modes and mechanisms of AlGaN/GaN HEMTs, observed during accelerated tests at various bias conditions are reviewed.
Keywords :
aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device reliability; wide band gap semiconductors; AlGaN; failure modes; high electron mobility transistors; semiconductor device reliability; Aluminum gallium nitride; Capacitance; Electroluminescence; Gallium nitride; HEMTs; Life estimation; MODFETs; Passivation; Temperature; Testing;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418952
