DocumentCode :
26035
Title :
Modeling Erratic Bits Temperature Dependence for Monte Carlo Simulation of Flash Arrays
Author :
Zambelli, Cristian ; Koebernik, G. ; Ullmann, R. ; Bauer, Matthias ; Tempel, G. ; Olivo, Piero
Author_Institution :
Dipt. di Ing., Univ. degli Studi di Ferrara, Ferrara, Italy
Volume :
34
Issue :
3
fYear :
2013
fDate :
Mar-13
Firstpage :
390
Lastpage :
392
Abstract :
The erratic bits phenomenon has been extensively characterized in the last decade due to its massive burden on the performance and reliability of Flash memory devices. From a statistical standpoint, it has been possible to describe a Markov-chain-based model of this phenomenon in large arrays suitable for Monte Carlo simulation. This model, however, is based on the assumption of complete independence of the probabilistic parameters characterizing each erratic bit from the testing temperature. The goal of this letter is to provide, through the electrical characterization of nor Flash arrays, the statistical tools necessary to perform a correct simulation of the erratic bits under different temperature conditions.
Keywords :
Monte Carlo methods; flash memories; integrated circuit reliability; statistical analysis; Flash memory devices; Markov-chain-based model; Monte Carlo simulation; electrical characterization; erratic bits temperature dependence; flash arrays; probabilistic parameters; reliability; statistical tools; temperature conditions; testing temperature; Computer architecture; Equations; Markov processes; Mathematical model; Steady-state; Temperature dependence; Temperature distribution; Erratic bits; Flash memory; reliability; simulation; temperature;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2237541
Filename :
6419759
Link To Document :
بازگشت