• DocumentCode
    2603545
  • Title

    High-voltage Millimeter-Wave GaN HEMTs with 13.7 W/mm Power Density

  • Author

    Wu, Y.-F. ; Moore, M. ; Abrahamsen, A. ; Jacob-Mitos, M. ; Parikh, P. ; Heikman, S. ; Burk, A.

  • Author_Institution
    Cree Santa Barbara Technol. Center, Goleta
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    405
  • Lastpage
    407
  • Abstract
    Short-gate-length GaN HEMTs with advanced features including a field plate and an InGaN back-confinement barrier showed excellent I-V characteristics at high voltages. A 0.4-mm wide device with 0.15-mum gate and 0.25-mum field plate operated up to 60 V and achieved 13.7 W/mm power density at 30 GHz, the highest for a FET at millimeter-wave frequencies.
  • Keywords
    III-V semiconductors; gallium compounds; millimetre wave field effect transistors; power HEMT; wide band gap semiconductors; FET; GaN; InGaN; back-confinement barrier; high-voltage millimeter-wave HEMT; short-gate-length field-plated HEMT; size 0.15 mum; size 0.25 mum; size 0.4 mm; Frequency; Gallium nitride; Gold; HEMTs; Jacobian matrices; Lithography; MODFETs; Millimeter wave technology; Polarization; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4418958
  • Filename
    4418958
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2603545