Title :
Internal Dielectric Transduction of a 4.5 GHz Silicon Bar Resonator
Author :
Weinstein, Dana ; Bhave, Sunil A.
Author_Institution :
Cornell Univ., Ithaca
Abstract :
This paper presents experimental verification of frequency scaling in an internal dielectric transduced resonator. A silicon bar resonator is excited in its 3rd and 9th longitudinal harmonic modes at 1.53 and 4.51 GHz, respectively. The resonator demonstrates a 2 dB improvement in transduction efficiency in its 9th harmonic relative to its 3rd harmonic, normalized to the quality Q of the resonance. This result is in close agreement with theory, promising low- impedance transduction of silicon bulk acoustic resonators at frequencies exceeding 10 GHz.
Keywords :
acoustic microwave devices; acoustic resonators; bulk acoustic wave devices; dielectric resonators; elemental semiconductors; micromechanical resonators; silicon; MEMS resonator; Si; bulk acoustic resonators; frequency 1.53 GHz; frequency 4.51 GHz; frequency scaling verification; internal dielectric transduction; longitudinal harmonic modes; low-impedance transduction; silicon bar resonator; Acoustic applications; Dielectric films; Dielectric losses; Dielectric measurements; Frequency synthesizers; Micromechanical devices; Resonance; Resonant frequency; Silicon; Voltage;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418961
