Title :
High power 810 nm GaAsP/AlGaAs diode lasers with narrow beam divergence
Author :
Sebastian, J. ; Beister, G. ; Bugge, F. ; Erbert, G. ; Hansel, H.G. ; Buhrandt, F. ; Knauer, A. ; Hulsewede, R. ; Wenzel, H. ; Staske, R. ; Weyers, M. ; Trankle, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
Abstract :
We have demonstrated narrow-beam high-power 810 nm GaAsP/AlGaAs diode lasers with high efficiency grown by MOVPE. We demonstrate that the high gain of tensile strained GaAsP QW diode lasers in combination with a low loss LOC broadened waveguide structure leads to narrow beam diode lasers with high efficiency and good reliability at high output powers.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; gallium compounds; laser beams; laser reliability; optical fabrication; quantum well lasers; vapour phase epitaxial growth; waveguide lasers; 810 nm; GaAsP-AlGaAs; GaAsP/AlGaAs; GaAsP/AlGaAs diode lasers; MOVPE; efficiency; high efficiency lasers; high power diode lasers; laser gain; low loss LOC broadened waveguide structure; narrow beam diode lasers; narrow beam divergence; narrow-beam high-power diode lasers; output powers; reliability; tensile strained GaAsP QW diode lasers; Diode lasers; Filling; Laser beams; Lifetime estimation; Power generation; Power lasers; Temperature distribution; Voltage;
Conference_Titel :
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-6259-4
DOI :
10.1109/ISLC.2000.882268
