Title :
Resonance tunneling transistors based on C60 encapsulated double-walled carbon nanotubes
Author :
Li, Y.F. ; Kaneko, T. ; Hatakeyama, R.
Author_Institution :
Dept. of Electron. Eng., Tohoku Univ., Sendai
Abstract :
We report electrical transport properties of resonance tunneling transistors fabricated using C60-filled metallic double-walled carbon nanotubes. All the examined devices exhibit a strong negative differential resistance (NDR) behavior, and the high peak-to-valley current ratios more than 103 are observed at room temperature. More importantly, the observed NDR characteristics remain stable under forward and backward measurements. In addition, it is found that the applied gate voltages exercise a great influence on the peak voltage of NDR.
Keywords :
carbon nanotubes; fullerenes; resonant tunnelling transistors; C60-C; backward measurement; electrical transport; forward measurement; metallic double-walled carbon nanotubes; negative differential resistance; resonance tunneling transistors; temperature 293 K to 298 K; Carbon nanotubes; Diodes; Encapsulation; Plasma accelerators; Plasma density; Plasma measurements; Plasma sheaths; Resonance; Tunneling; Voltage; carbon nanotubes; encapsulation; fullerene; negative differential resistance;
Conference_Titel :
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-0607-4
Electronic_ISBN :
978-1-4244-0608-1
DOI :
10.1109/NANO.2007.4601165
