Title :
Highly reliable 1.3-/spl mu/m InGaAlAs MQW DFB lasers
Author :
Sudoh, T.K. ; Takemoto, D. ; Tsuchiya, T. ; Aoki, M. ; Tsuji, S.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
We have successfully demonstrated high characteristic temperature, low differential resistance, and stable single-longitudinal-mode operation of 1.3-μm InGaAlAs MQW DFB lasers with high reliability. These excellent characteristics indicate that this laser is quite suitable for low-cost transmitters.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; infrared sources; laser modes; laser reliability; laser transitions; optical transmitters; quantum well lasers; semiconductor device reliability; 1.3 mum; InGaAlAs; InGaAlAs MQW DFB lasers; high characteristic temperature; high reliability; highly reliable 1.3-/spl mu/m InGaAlAs MQW DFB lasers; low differential resistance; low-cost optical transmitters; stable single-longitudinal-mode operation; Aging; Electrons; Gratings; Laser stability; Maintenance; Quantum well devices; Substrates; Temperature; Testing; Transmitters;
Conference_Titel :
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-6259-4
DOI :
10.1109/ISLC.2000.882285
