Title :
Parasitics and design considerations on oxide-implant VCSELs
Author :
Chang, C.H. ; Chrostowski, L. ; Chang-Hasnain, C.J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
VCSELs are promising high-speed transmitters in lightwave communication systems. Two major device structures used today are oxide-confined and proton-implanted VCSELs. The former has a high capacitance due to the thin oxide layer, whereas the latter has a high resistance due to a small injection area. Oxide plus implant VCSELs was demonstrated to have >20 GHz modulation bandwidth. However, the design rule and trade-off on oxide and implant dimensions and their impact on VCSEL´s modulation response have not been clearly shown. In the paper, we fabricated VCSELs of oxide-only and oxide-implant structures on the same sample and show that, conclusively and quantitatively, the additional implant process increases VCSEL modulation speed. A model is proposed to design high-speed VCSELs by removing the parasitic limitation.
Keywords :
distributed Bragg reflector lasers; high-speed optical techniques; ion implantation; laser beams; laser cavity resonators; optical fabrication; optical fibre communication; optical modulation; optical transmitters; semiconductor lasers; surface emitting lasers; 20 GHz; design considerations; design rule; high-speed VCSELs; high-speed transmitters; implant dimensions; implant process; lightwave communication systems; modulation bandwidth; modulation response; modulation speed; oxide dimensions; oxide-confined VCSELs; oxide-implant VCSELs; oxide-implant structures; oxide-only structures; parasitic limitation; proton-implanted VCSELs; small injection area; thin oxide layer; Apertures; Bandwidth; Capacitance; Distributed Bragg reflectors; Frequency measurement; Gallium arsenide; Implants; Semiconductor device modeling; Transmitters; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-6259-4
DOI :
10.1109/ISLC.2000.882305
