Title :
High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO as gate dielectrics
Author :
Xuan, Y. ; Wu, Y.Q. ; Shen, T. ; Yang, T. ; Ye, P.D.
Author_Institution :
Purdue Univ., West Lafayette
Abstract :
High-performance inversion-type enhancement-mode n-channel In0.53Ga0.47As MOSFETs with atomic layer deposited (ALD) Al2O3, HfO2, and HfAlO as gate dielectrics are demonstrated. The ALD process on III-V compound semiconductors enables the formation of high-quality gate oxides and unpinning of Fermi level on III-V in general. A 0.5-mum gate-length MOSFET with an Al2O3 gate oxide thickness of 8 nm shows a maximum drain current of 430 mA/mm and a transconductance of 160 mA/mm at drain voltage of 2 V. The transconductance is improved to 180 mA/mm by implementing HfO2 or HfAlO as gate dielectrics with the same oxide thickness. The peak effective mobility is -1200 cm2/Vs from dc measurement, ~ 4000 cm2/Vs after interface trap correction for HfO2/In0.53Ga0.47As NMOSFETs.
Keywords :
Fermi level; III-V semiconductors; MOSFET; alumina; atomic layer deposition; carrier mobility; electric current; gallium arsenide; hafnium compounds; high-k dielectric thin films; indium compounds; Al2O3; Fermi level unpinning; HfAlO; HfO2; III-V compound semiconductors; In0.53Ga0.47As; NMOSFET; atomic layer deposition process; effective mobility; gate dielectrics; interface trap correction; maximum drain current; size 0.5 mum; size 8 nm; submicron inversion-type enhancement-mode MOSFET; transconductance parameters; voltage 2 V; Encapsulation; Hafnium oxide; High-K gate dielectrics; Indium gallium arsenide; MOSFETs; Molecular beam epitaxial growth; Semiconductor device manufacture; Substrates; Temperature; Transconductance;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419020
