Title :
Edge-emitting microlasers with a single quantum dot active layer
Author :
Rennon, S. ; Avary, K. ; Klopf, F. ; Wolf, A. ; Emmerling, M. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Tech. Phys., Wurzburg Univ., Germany
Abstract :
We have realized edge emitting microlasers on a GaInAs-AlGaAs quantum dot laser structure with deeply etched DBR mirrors. Lasers with 40 /spl mu/m cavity length show CW operation at room temperature, exhibiting threshold currents below 4 mA. CW output powers exceed 5 mW for 40 /spl mu/m long lasers emitting from the ground state at 980 nm.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser mirrors; quantum well lasers; semiconductor quantum dots; 40 mum; 5 mW; 980 nm; CW operation; CW output powers; GaInAs-AlGaAs; GaInAs-AlGaAs quantum dot laser structure; cavity length; deeply etched DBR mirrors; edge-emitting microlasers; ground state; room temperature; single quantum dot active layer; threshold currents; Distributed Bragg reflectors; Etching; Land surface temperature; Mirrors; Power generation; Power lasers; Quantum dot lasers; Quantum dots; Stationary state; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-6259-4
DOI :
10.1109/ISLC.2000.882326
