DocumentCode :
2604729
Title :
A Life-Test Study of Electromigration in Microwave Power Transistors
Author :
Gottesfeld, S.
Author_Institution :
RCA Solid State Division, Rt. 202, Somerville, N.J. 08876
fYear :
1974
fDate :
27120
Firstpage :
94
Lastpage :
100
Abstract :
A life-test study was made of a microwave power transistor-employing aluminum metallization. The life tests were conducted under dc overstress conditions to accelerate the rate of failure as a result of electro-migration of the metallization system. Extrapolation of the data obtained showed a predicted MTF of approximately one hundred years for the device under test at a typical operating-current density of 8.4 × 104 A/cm2 and junction temperature of 150°C. Analysis of the failures revealed the presence of both aluminum and silicon electromigration, with the latter the primary cause of failure, A failure-rate model was constructed from the data relating MTF to activation energy, temperature, and current density.
Keywords :
Aluminum; Electromigration; Extrapolation; Life estimation; Life testing; Metallization; Microwave devices; Power transistors; System testing; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1974. 12th Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1974.362635
Filename :
4208013
Link To Document :
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