Title :
1.3 /spl mu/m AlGaInAs ridge waveguide lasers with uncooled 10 Gb/s operation at 85/spl deg/C
Author :
Hanamaki, Y. ; Takiguchi, T. ; Kadowaki, T. ; Tanaka, T. ; Takemi, Masayoshi ; Tomita, N. ; Mihashi, Y. ; Omura, E.
Author_Institution :
HF & Opt. Semicond. Div., Mitsubishi Electr. Corp., Itami, Japan
Abstract :
We have realized 1.3 /spl mu/m MQW AlGaInAs lasers with 10 Gb/s operation even at high temperature of 85 C. This performance is well suitable for the uncooled high-speed transmission in optical communication systems, especially for gigabit ethernet application.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser transitions; optical fibre LAN; optical transmitters; quantum well lasers; ridge waveguides; waveguide lasers; 1.3 /spl mu/m MQW AlGaInAs lasers; 10 Gbit/s; 85 C; AlGaInAs; AlGaInAs ridge waveguide lasers; Gb/s operation; gigabit ethernet application; high temperature; optical communication systems; uncooled 10 Gb/s operation; uncooled high-speed transmission; Current measurement; Frequency measurement; Length measurement; Power lasers; Power measurement; Pulse measurements; Reflectivity; Temperature dependence; Temperature distribution; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-6259-4
DOI :
10.1109/ISLC.2000.882327
