DocumentCode :
2604813
Title :
Die Bond Failure Modes
Author :
Johnson, J.E.
Author_Institution :
Westinghouse Electric Corporation, Semiconductor Division, Youngwood, Pa. 15697
fYear :
1974
fDate :
27120
Firstpage :
150
Lastpage :
154
Abstract :
Die bond failures are of particular concern because of their impact on the stability of device electrical performance over a period of time in use, during which the device may be subjected to elevated temperatures, thermal cycling, and hostile ambients. The ultimate failure of a die bond comes when the device fails either to block voltage, or to conduct current because either the semiconducting element has cracked, or the solder bond has ruptured. Earlier, before such catastrophic happenings, it is possible to find indications of trouble in developing trends toward increased junction leakage currents, or decreased power handling capability when heat can no longer be dissipated fast ecx nough to dat nough to prevent the device from going into secondary breakdown.
Keywords :
Assembly; Chemical analysis; Microassembly; Plastics; Silicon; Substrates; Temperature; Thermal resistance; Thermal stresses; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1974. 12th Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1974.362641
Filename :
4208019
Link To Document :
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