Title :
Monte Carlo simulation of spin-polarized transport in GaAs nanostructures
Author :
Tierney, Brian D. ; Goodnick, Stephen M.
Author_Institution :
Electr. Eng. Dept., Arizona State Univ., Tempe, AZ
Abstract :
An ensemble Monte Carlo program, in conjunction with an 8-band k.p self-consistent solver, is used to simulate the temporal and spatial evolution of the spin polarization of current through a GaAs/AlGaAs heterostructure with a source and drain defined as quantum point contacts that spin-polarize the current. Results relate the effect of an applied gate voltage on both the Dresselhaus and Rashba contributions of the D´yakanov-Perel spin-flip scattering mechanism, the predominant spin scattering mechanism in AlGaAs/GaAs heterostructures at 300 K. Results are presented on the simulation of a spin-FET structure using quantum point contacts (QPCs) as a spin polarizer and spin detector.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; field effect transistors; gallium arsenide; k.p calculations; nanostructured materials; quantum point contacts; semiconductor heterojunctions; spin polarised transport; two-dimensional electron gas; 2DEG; 8-band k.p self-consistent solver; D´yakanov-Perel spin-flip scattering mechanism; Dresselhaus effect; GaAs-AlGaAs; Monte Carlo simulation; Rashba effect; gate voltage; quantum point contacts; semicinductor heterostructure; spin detector; spin-FET structure; spin-polarized transport; temperature 300 K; Decision support systems; Gallium arsenide; Nanostructures; Nanotechnology; Spin polarized transport; Dresselhaus Effect; D¿Yakanov-Perel; Ensemble Monte Carlo; Heterostructure; Quantum-Point-Contact; Rashba Effect; Spintronics;
Conference_Titel :
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-0607-4
Electronic_ISBN :
978-1-4244-0608-1
DOI :
10.1109/NANO.2007.4601222
