Title :
Ion Instabilities in MOS Structures
Author_Institution :
Bell-Northern Research, Ottawa, Canada
Abstract :
Sodium and a few other alkali metal impurities, introduced during processing into the SiO2 gate insulator of MOS devices, are easily ionized and are sufficiently mobile even at low temperatures to cause a considerable drift of the electrical characteristics of MOS devices. This paper reviews methods of detecting the presence of mobile ions and discusses techniques for reducing the concentration of impurities or eliminating their deleterious electrical effect.
Keywords :
Capacitance; Dielectrics and electrical insulation; Electric variables; FETs; Impurities; MOS devices; MOSFETs; Metal-insulator structures; Silicon; Temperature;
Conference_Titel :
Reliability Physics Symposium, 1974. 12th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1974.362654
