Title :
Mobility Enhancement in Uniaxially Strained (110) Oriented Ultra-Thin Body Single- and Double-Gate MOSFETs with SOI Thickness of Less Than 4 nm
Author :
Shimizu, Ken ; Hiramoto, Toshiro
Author_Institution :
Univ. of Tokyo, Tokyo
Abstract :
Mobility in single-gate (SG) and double-gate (DG) ultra-thin body (UTB) SOI MOSFETs under uniaxial tensile stress has been systematically examined. Mobility enhancement in both UTB nMOSFETs and pMOSFETs by stress is experimentally demonstrated for the first time. The enhancement in UTB nMOSFETs is larger than the prediction by theory. The mobility enhancement by stress in DG UTB nMOSFETs and pMOSFETs is also observed. The enhancement may originate from not only the subband energy shift but effective mass change.
Keywords :
MOSFET; electron mobility; silicon-on-insulator; MOSFET; SOI; mobility enhancement; subband energy shift; uniaxial tensile stress; Analytical models; Capacitive sensors; Degradation; Effective mass; Electron mobility; Electronic mail; MOSFETs; Semiconductor device measurement; Strain measurement; Tensile stress;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419046
