Title :
Analytical Model of Carbon Nanotube Electrostatics: Density of States, Effective Mass, Carrier Density, and Quantum Capacitance
Author :
Akinwande, Deji ; Nishi, Yoshio ; Wong, H. S Philip
Author_Institution :
Stanford Univ., Stanford
Abstract :
Fundamental electrostatic properties of achiral carbon nanotubes (CNTs) are derived analytically. These include an exact derivation of the density of states within the nearest neighbor tight-binding formalism, the group velocity, and the effective mass. In addition, the non-degenerate equilibrium carrier density, and quantum capacitance are presented analytically. The quantum capacitance is used to provide a low energy C-V theory for a top-gated CNT device with good correlation to experimental data.
Keywords :
capacitance; carbon nanotubes; carrier density; effective mass; electronic density of states; electrostatics; tight-binding calculations; C; achiral carbon nanotubes; carbon nanotube electrostatics model; density of states; effective mass; electrostatic properties; group velocity; low energy C-V theory; nearest neighbor tight-binding formalism; nondegenerate equilibrium carrier density; quantum capacitance; top-gated CNT device; Analytical models; Capacitance-voltage characteristics; Carbon nanotubes; Charge carrier density; Effective mass; Electrostatic analysis; Equations; Photonic band gap; Quantum capacitance; Solids;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419056
