Title :
New characterization and modeling approach for NBTI degradation from transistor to product level
Author :
Huard, V. ; Parthasarathy, C. ; Rallet, N. ; Guerin, C. ; Mammase, M. ; Barge, D. ; Ouvrard, C.
Author_Institution :
STMicroelectronics, Crolles
Abstract :
From extensive set of silicon data presented in this study, we report a new way of understanding and modeling various aspects of NBTI degradation from transistor to product level. This work opens new paths for both relevant process improvements and product optimization.
Keywords :
elemental semiconductors; hole traps; interface states; semiconductor device models; silicon; thermal stability; thermal stresses; transistors; NBTI degradation modeling; Si; hole trapping; interface traps creation; product optimization; reaction-limited model; silicon data; transistor-to-product level; Condition monitoring; Degradation; Dielectrics; Niobium compounds; Predictive models; Silicon; Stress; Temperature dependence; Titanium compounds; Voltage;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419068
