Title :
Investigation of nanowire size dependency on TSNWFET
Author :
Suk, Sung Dae ; Li, Ming ; Yeoh, Yun Young ; Yeo, Kyoung Hwan ; Cho, Keun Hwi ; Ku, In Kyung ; Cho, Hong ; Jang, WonJun ; Kim, Dong-Won ; Park, Donggun ; Lee, Won-Seong
Author_Institution :
Samsung Electron. Co., Yongin-City,
Abstract :
Nanowire size (dNW) dependency of various electrical characteristics on gate all around twin silicon nanowire MOSFET (TSNWFET) is investigated to understand overall performance of nanowire transistor deeply. When dNW decreases, current drivability (Ion) normalized by circumference at the same VG-VTH improves and maximizes at dNW of 4 nm. And mobility is also estimated with capacitance and series resistance. All the experimental investigation shows that dNW of 4 nm is the best point to maximize the volume inversion effect on gate all around nanowire MOSFET.
Keywords :
MOSFET; nanowires; silicon; TSNWFET; nanowire size; twin silicon nanowire MOSFET; Capacitance; Electric resistance; Electric variables; Etching; Germanium silicon alloys; MOSFET circuits; Research and development; Silicon compounds; Silicon germanium; Transistors;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419093
