Physical Model for NAND operation in SOI and Body-Tied Nanocrystal FinFLASH memories

Here we present a semi-analytical model for nanocrystal-based (NCs) FinFLASH memories under uniform stress: Fowler-Nordheim (FN) write/erase, gate disturb and data retention are addressed. This model is able to catch the essential features related to the non-uniform trapped charge distribution in such a complex 3D structure. Both body tied and SOI devices are included in the model. Main conclusions are related to the different characteristic times of charge trapping over fin corners or planar fin regions: double dynamics during programming, intrinsic disturb immunity of written state in FF cells. The aspect ratio impact on DeltaV_TH is also evaluated showing a slightly better performance of body tied devices.