Title :
A hybrid method for fabrication of Au nanocrystals nonvolatile memory
Author :
Wang, Q. ; Jia, R. ; Li, W.L. ; Guan, W.H. ; Liu, Q. ; Hu, Y. ; Long, S.B. ; Chen, B.Q. ; Liu, M. ; Ye, T.C. ; Lu, W.S. ; Jiang, L.
Author_Institution :
Inst. of Microelectron., Key Lab. of Nanofabrication & Novel Device integrated Technol., Chinese Acad. of Sci., Beijing
Abstract :
This paper demonstrates the integration of Au nanocrystals (NCs) into nonvolatile metal-oxide-semiconductor (MOS) with a hybrid method operated at room temperature. The comparison of structural and electrical characteristics between the hybrid Au NCs fabricated by chemical syntheses and film deposition Au NCs fabricated by rapid thermal annealing (RTA) was carried out. The size of the Au NCs formed by chemical method has been investigated more unique and small than the ones by the film deposition and RTA process. The electrical characteristics of MOS structure with two kinds of Au NCs has shown the larger memory window, lower P/E voltage and good retention time for the hybrid NCs due to its small diameter and low temperature process.
Keywords :
MOS memory circuits; gold; nanostructured materials; nanotechnology; random-access storage; rapid thermal annealing; semiconductor storage; Au; chemical synthesis; electrical characteristics; film deposition; gold nanocrystals; hybrid method; memory window; nanofabrication; nonvolatile memory; nonvolatile metal-oxide-semiconductor; rapid thermal annealing; retention time; Chemical processes; Electric variables; Fabrication; Gold; Nanocrystals; Nonvolatile memory; Rapid thermal annealing; Rapid thermal processing; Temperature; Voltage; RTA; hybrid; nanocrystals; nonvolatile memory;
Conference_Titel :
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-0607-4
Electronic_ISBN :
978-1-4244-0608-1
DOI :
10.1109/NANO.2007.4601338
