DocumentCode :
2606924
Title :
Ion Microprobe Analysis of Integrated Circuit Structures
Author :
Dobrott, R.D. ; Keenan, J.A. ; Larrabee, G.B.
Author_Institution :
Texas Instruments Incorporated, P. O. Box 5936, M. S. 147, Dallas, Texas 75222. (214)238-3981
fYear :
1977
fDate :
28216
Firstpage :
54
Lastpage :
60
Abstract :
The ion microprobe mass analyzer was used to determine the presence of both intentional and unintentional impurities in integrated circuit structures. The in-depth distribution of these impurities and their relative concentrations was determined by ion sputtering through the layers of the circuit. Analysis of areas where each layer has a matrix element change, e.g., SiO2 to silicon, was used to relate sputter time to layer interfaces. Impurities detected in dielectric films include carbon fluorine, zinc, tin, lead and barium, while resistors were observed to contain lead and tin.
Keywords :
Barium; Chemical elements; Circuit analysis; Dielectric films; Impurities; Resistors; Silicon; Sputtering; Tin; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1977. 15th Annual
Conference_Location :
LAs Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1977.362772
Filename :
4208159
Link To Document :
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