Title :
High-performance varactor diodes integrated in a silicon-on-glass technology
Author :
Buisman, K. ; Nanver, L.K. ; Scholtes, T.L.M. ; Schellevis, H. ; de Vreede, L.C.N.
Author_Institution :
HiTec, Delft, Netherlands
Abstract :
High-performance low-loss boron-passivated Schottky varactor diodes have been fabricated in a silicon-on-glass substrate transfer technology, using laser-annealed back-wafer contacts and copper-plated aluminum. The diodes have well-defined doping profiles predetermined by the circuit application and high quality factors ranging typically from 100 till 300 at 2 GHz.
Keywords :
Q-factor; Schottky diodes; aluminium; boron; coating techniques; copper; doping profiles; glass; ohmic contacts; passivation; silicon; silicon-on-insulator; substrates; varactors; 2 GHz; B; Schottky varactor diodes; copper-plated aluminum; doping profiles; laser-annealed back-wafer contacts; passivation; silicon-on-glass technology; substrate transfer technology; Capacitance-voltage characteristics; Contact resistance; Doping profiles; Integrated circuit technology; Linearity; Optical device fabrication; Radio frequency; Schottky diodes; Silicon; Varactors;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546599
