DocumentCode
2607486
Title
Quantum short-channel compact modeling of drain-current in double-gate MOSFET
Author
Munteanu, Daniela ; Autran, Jean-Luc ; Loussier, Xavier ; Harrison, Samuel ; Cerutti, Robin ; Skotnicki, Thomas
Author_Institution
CNRS, Marseille, France
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
137
Lastpage
140
Abstract
A continuous compact model for the drain current, including short-channel effects and carrier quantization in double-gate MOSFET is developed. The model is particularly well-adapted to ultra-scaled devices, with short channel lengths and ultra-thin silicon films. An extensive comparison step with 2D quantum numerical results fully validates the model. Finally, the model is shown to reproduce with an excellent accuracy experimental drain current in double-gate devices.
Keywords
MOSFET; elemental semiconductors; semiconductor device models; semiconductor thin films; silicon; Si; carrier quantization; continuous compact model; double gate MOSFET; drain current model; quantum short-channel compact modeling; short channel effects; short channel lengths; ultra scaled devices; ultra thin silicon films; Circuit simulation; Electrostatics; MOSFET circuits; Physics; Quantization; Quantum mechanics; Semiconductor films; Silicon; Thin film circuits; Thin film devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN
0-7803-9203-5
Type
conf
DOI
10.1109/ESSDER.2005.1546604
Filename
1546604
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