DocumentCode :
26075
Title :
Dislocation Scattering in ZnMgO/ZnO Heterostructures
Author :
Ling Sang ; Shao Yan Yang ; Gui Peng Liu ; Gui Juan Zhao ; Chang Bo Liu ; Cheng Yan Gu ; Hong Yuan Wei ; Xiang Lin Liu ; Qin Sheng Zhu ; Zhan Guo Wang
Author_Institution :
Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China
Volume :
60
Issue :
6
fYear :
2013
fDate :
Jun-13
Firstpage :
2077
Lastpage :
2079
Abstract :
The role of dislocation scattering in electron mobility in ZnMgO/ZnO heterostructures was studied. It was found that dislocation scattering was dominant in the low-electron concentration region. The total low-temperature mobility was calculated by considering dislocation scattering and interface-roughness scattering (IRS) together. The sheet density of dislocations was chosen as Ndis=1.5 × 108 cm-2 and the IRS parameters were Δ = 5.206 and Λ = 30 Å. We obtained a good fit between our calculated results and experimental data reported in the works referenced.
Keywords :
II-VI semiconductors; dislocation density; dislocation scattering; electron density; electron mobility; interface roughness; magnesium compounds; semiconductor heterojunctions; wide band gap semiconductors; zinc compounds; IRS parameters; ZnMgO-ZnO; dislocation scattering; electron mobility; heterostructures; interface roughness scattering; low-electron concentration region; low-temperature mobility; sheet dislocation density; Dislocation scattering; ZnMgO/ZnO heterostructures; interface-roughness scattering; mobility;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2255599
Filename :
6504495
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=26075
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