Dislocation Scattering in ZnMgO/ZnO Heterostructures

Author

Ling Sang ; Shao Yan Yang ; Gui Peng Liu ; Gui Juan Zhao ; Chang Bo Liu ; Cheng Yan Gu ; Hong Yuan Wei ; Xiang Lin Liu ; Qin Sheng Zhu ; Zhan Guo Wang

Author_Institution

Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China

Volume

60

Issue

6

fYear

2013

fDate

Jun-13

Firstpage

2077

Lastpage

2079

Abstract

The role of dislocation scattering in electron mobility in ZnMgO/ZnO heterostructures was studied. It was found that dislocation scattering was dominant in the low-electron concentration region. The total low-temperature mobility was calculated by considering dislocation scattering and interface-roughness scattering (IRS) together. The sheet density of dislocations was chosen as N_dis=1.5 × 10⁸ cm^-2 and the IRS parameters were Δ = 5.206 and Λ = 30 Å. We obtained a good fit between our calculated results and experimental data reported in the works referenced.

Keywords

II-VI semiconductors; dislocation density; dislocation scattering; electron density; electron mobility; interface roughness; magnesium compounds; semiconductor heterojunctions; wide band gap semiconductors; zinc compounds; IRS parameters; ZnMgO-ZnO; dislocation scattering; electron mobility; heterostructures; interface roughness scattering; low-electron concentration region; low-temperature mobility; sheet dislocation density; Dislocation scattering; ZnMgO/ZnO heterostructures; interface-roughness scattering; mobility;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2255599

Filename

6504495