Title :
Monte Carlo simulations of sub-100 nm InGaAs MOSFETs for digital applications
Author :
Kalna, K. ; Yang, L. ; Asenov, A.
Author_Institution :
Glasgow Univ., UK
Abstract :
We have studied the performance potential of 80 and 35 nm physical gate length MOSFETs with In0.2Ga0.8As channel using ensemble Monte Carlo (MC) device simulations. MC transport model includes self-consistent calculations of Fermi energy and electron temperature using Fermi-Dirac statistics, interface roughness scattering and quantum confinement corrections in order to attain a realistic prediction of device performance. The 80 nm InGaAs MOSFET with a realistic source/drain doping of 2 ×1019cm-3 can deliver more than 60% increase in the drive current compared to the Si based MOSFETs with a similar channel length. The 80 nm InGaAs MOSFET with a large peak doping of 5 ×1019cm-3 can outperform the strained Si MOSFET by more than 200%. However, the 35 nm InGaAs MOSFET cannot outperform significantly the equivalent strained Si MOSFETs even with the extremely high source/drain doping of 5 × 1019cm-3.
Keywords :
Fermi level; III-V semiconductors; MOSFET; Monte Carlo methods; gallium arsenide; indium compounds; semiconductor device models; semiconductor doping; 35 nm; 80 nm; Fermi energy; Fermi-Dirac statistics; In0.2Ga0.8As; InGaAs; MOSFET device; Monte Carlo device simulation; electron temperature; interface roughness scattering; quantum confinement corrections; source-drain doping; transport model; Doping; Electrons; Indium gallium arsenide; MOSFETs; Monte Carlo methods; Particle scattering; Predictive models; Semiconductor process modeling; Statistics; Temperature distribution;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546612